| PART |
Description |
Maker |
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| 3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation
Sony, Corp.
|
| SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
| 3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| SGM2016AN SGM2016 |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET
0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|
| NES1823P-140 |
140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| 3SK239A |
From old datasheet system
Silicon NPN Triple Diffused
GaAs Dual Gate MES FET
|
Hitachi Semiconductor
|
| GN1021 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
|
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
